網(wǎng)絡(luò)釋義

用法例句

SiGe HBT Class AB Power Amplifier for Wireless Communications;

用于無線通信的SiGe異質(zhì)結(jié)雙極型晶體管AB類功率放大器(英文)

Frequency performance is the first key factor in the design of heterojunction bipolar transistor(HBT),fTand fmax are the main frequency parameters.

頻率特性是異質(zhì)結(jié)雙極型晶體管(HBT)設(shè)計(jì)中應(yīng)首先考慮的因素,而fT,fmax則是HBT最主要的頻率性能指標(biāo)。

An InP-based single-heterojunction bipolar transistor(SHBT)with base μ-bridge and emitter air-bridge is reported.

報(bào)道了具有基極微空氣橋和發(fā)射極空氣橋結(jié)構(gòu)的InP單異質(zhì)結(jié)雙極型晶體管(SHBT)。

We report the performance of the first self-aligned InP/InGaAs double heterojunction bipolar transistor (DHBT) produced in China.

報(bào)道了一種自對(duì)準(zhǔn)InP/InGaAs雙異質(zhì)結(jié)雙極晶體管的器件性能。

heterojunction bipolar transistor

異質(zhì)結(jié)雙極型晶體管

SiGe Heterojunction Bipolar Transistor (SiGe HBT) Research and Design;

SiGe異質(zhì)結(jié)雙極晶體管（SiGe HBT）研究與設(shè)計(jì)

Study on ESD of InGaP Heterojunction Bipolar Transistors

InGaP異質(zhì)結(jié)雙極晶體管ESD特性研究

A physical-model of small-signal InP-based double heterojunction bipolar transistors and its parameter extraction technique

一種InP雙異質(zhì)結(jié)雙極晶體管小信號(hào)物理模型及其提取方法

Status of InP/GaAsSb/InP Double Heterojunction Bipolar Transistors Technology

InP/GaAsSb/InP雙異質(zhì)結(jié)雙極晶體管技術(shù)發(fā)展現(xiàn)狀(Ⅰ)

The DFM of Ultrahigh SiGe HBT;

超高頻SiGe異質(zhì)結(jié)雙極晶體管的可制造性設(shè)計(jì)

Simulation, Design and Fabrication of GaAs-based Heterostructure Bipolar Transistor;

GaAs基異質(zhì)結(jié)雙極晶體管（HBT）的模擬、設(shè)計(jì)與制作

Experimental Research on Reliability of GeSi/Si Heterojunction Bipolar Transistors (HBTs);

GeSi/Si異質(zhì)結(jié)雙極晶體管（HBT）可靠性實(shí)驗(yàn)研究

The Study and Design of High Frequency Power SiGe Heterojunction Bipolar Transistors(HBTs);

高頻功率SiGe異質(zhì)結(jié)雙極晶體管（HBTs）的研究與設(shè)計(jì)

The Study of SiGe Heterojunction Bipolar Transistors and its Integrated Circuits;

SiGe異質(zhì)結(jié)雙極晶體管及其集成電路的研究

The Research of Base Dopant Outdiffusion and Setback Layers in SiGe Microwave Heterojunction Bipolar Transistor(HBT);

SiGe微波異質(zhì)結(jié)雙極晶體管中基區(qū)雜質(zhì)外擴(kuò)及阻擋層的研究

Experimental Research on Reliability of Si/SiGe/Si Heterojunction Bipolar Transistors (HBTs) under Thermal and Electrical Stress;

熱電應(yīng)力下Si/SiGe/Si異質(zhì)結(jié)雙極晶體管（HBTs）可靠性實(shí)驗(yàn)研究

double heterojunction laser diode

雙異質(zhì)結(jié)激光二極管

monorail double heterojunction diode

單軌雙異質(zhì)結(jié)二極管

The Convergence Characteristic of the Forward I-V Characteristic Curves of Emitter-base Junction of Bipolar Junction Transistor;

雙極結(jié)型晶體管發(fā)射結(jié)正向I-V特性曲線的匯聚特性

Measuring methods for insulated-gate bipolar transistor

GB/T17007-1997絕緣柵雙極型晶體管測(cè)試方法

Effects of Stress on Bipolar Transistor Performance Parameters

應(yīng)力對(duì)雙極型晶體管參數(shù)性能的影響

A Study of the Structure and the Performance of Microwave Silicon Bipolar Transistor Using for MMIC and Its Process Development

用于MMIC硅基雙極型高頻微波晶體管結(jié)構(gòu)、性能研究及工藝開發(fā)