網(wǎng)絡(luò)釋義

用法例句

Study on the evolution of Au heteroepitaxial islands on Cu(001) by molecular dynamics simulation;

Au/Cu(001)異質(zhì)外延島演化的分子動(dòng)力學(xué)研究

The heteroepitaxial diamond films were grown on the p\|type Si (100) substrate by microwave plasma chemical vapor deposition (CVD).

在p型硅 (10 0 )襯底上 ,采用襯底負(fù)偏壓微波等離子體CVD方法進(jìn)行了p型異質(zhì)外延金剛石膜的生長(zhǎng) 。

In this thesis, the heteroepitaxial growths for Au/Cu(001), Au/Cu(111), Ag/Cu(001), Ag/Cu(111), Cu/Au(001) and Cu/Au(111) were simulated by molecular dynamic method(MD) with embedded atom method(EAM).

異質(zhì)外延生長(zhǎng)是薄膜生長(zhǎng)中的重要研究課題,從原子水平上認(rèn)識(shí)異質(zhì)薄膜生長(zhǎng)的物理本質(zhì),對(duì)于改進(jìn)制備工藝和提高薄膜質(zhì)量都有著重要的指導(dǎo)作用。

InP/GaAs, GaAs/Si and InP/GaAs/Si Heteroepitaxy Technologies and Their Applications in Integrated Optoelectronic Devices;

InP/GaAs、GaAs/Si、InP/GaAs/Si異質(zhì)外延生長(zhǎng)技術(shù)及其在集成光電子器件中的應(yīng)用

Molecular dynamics simulation has been used to study the heteroepitaxy of Cu/Au(001) and Au/Cu(001) with the embedded atom potentials.

利用分子動(dòng)力學(xué)模擬方法研究了Cu/Au(001)和Au/Cu(001)異質(zhì)外延島的演化行為。

We demonstrate a tunable long-wavelength photodetector by using a heteroepitaxy growth of an InP-In0.

基于此低溫緩沖層,在GaAs襯底上首先生長(zhǎng)GaAs/AlAs材料的F-P腔濾波器,然后異質(zhì)外延InP-In0。

The materials of semiconductor hetero-epitaxy and quantum dots are widely used in the fields such as nano-electronics and optoelectronics.

半導(dǎo)體異質(zhì)外延材料和量子點(diǎn)材料在納米電子學(xué)、光電子學(xué)中具有廣泛的應(yīng)用前景。

Fabrication of high-quality ZnO/Si heteroepitaxial films by pulsed laser deposition

PLD工藝制備高質(zhì)量ZnO/Si異質(zhì)外延薄膜

Investigations of Heteroepitaxy and New Semiconductor Materials for Optoelectronic Integration

光電子集成中的異質(zhì)外延與新材料研究

Heteroepitaxial Growth of InP on GaAs Using Low-temperature InGaP Buffer Layers with Graded Composition

基于低溫InGaP組分漸變緩沖層的InP/GaAs異質(zhì)外延

Geometric phase analysis of strain in AlSb/GaAs hetero-epitaxial film by HRTEM

AlSb/GaAs異質(zhì)外延薄膜應(yīng)變的HRTEM幾何相位分析

Heteroepitaxial 4H-SiC Films Growth on AlN/Si(111) Composite Substrates

AlN/Si(111)復(fù)合襯底上4H-SiC薄膜的異質(zhì)外延

Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology

異質(zhì)外延GaN薄膜中缺陷對(duì)表面形貌的影響

Study of Growth Technology and Structural Properties of SiC Films on Sapphire Compound Substrate;

碳化硅寬帶隙半導(dǎo)體薄膜的異質(zhì)外延生長(zhǎng)技術(shù)及其結(jié)構(gòu)性質(zhì)分析

Characterization of homoepitaxial and heteroepitaxial diamond films grown by chemical vapor deposition

同質(zhì)與異質(zhì)外延摻雜CVD金剛石薄膜的結(jié)構(gòu)與性能

Surface Defects of Heteroepitaxial Layers of GaP on GaAs Substrates and Green Emitting Electroluminescent(EL) Diodes(Abstract)

在砷化鎵襯底上異質(zhì)外延磷化鎵的表面缺陷與綠色發(fā)光管(摘要)

Study on Energetic Deposition and Heteroepitaxial Behavior by Moleculer Dynamics Simulation;

載能沉積過(guò)程與異質(zhì)外延生長(zhǎng)行為的分子動(dòng)力學(xué)模擬研究

Study on Heteroepitaxial Growth of Au/Cu,Ag/Cu and Cu/Au System by Molecular Dynamics Dynamics Simulation;

Au/Cu、Ag/Cu及Cu/Au體系異質(zhì)外延生長(zhǎng)的分子動(dòng)力學(xué)研究

Theoretical and Experimental Research on GaAs/Si Heteroepitaxial and Boron-Incorporated Photoelectronic Materials;

GaAs/Si和含B光電子材料異質(zhì)外延生長(zhǎng)的理論和實(shí)驗(yàn)研究

XRD Characterization of GaAs-Based Hetero-Epitaxy Materials and SiC MESFET Structure Materials;

GaAs多層異質(zhì)外延結(jié)構(gòu)材料和SiC MESFET結(jié)構(gòu)材料的X射線雙晶衍射分析

GaAs/InP and Si/GaAs Heteroepitaxy and Their Applications in Integrated Optoelectronic Devices

GaAs/InP、Si/GaAs異質(zhì)外延生長(zhǎng)技術(shù)及其在集成光電子器件中的應(yīng)用

The Calculation of Strain Field in Semiconductor Heteroepitaxy Material and Quantum Dot Relax Degree

半導(dǎo)體異質(zhì)外延材料的應(yīng)變場(chǎng)及量子點(diǎn)弛豫度的計(jì)算

Heteroepitaxial growth of InP/GaAs using low-temperature In_xGa_(1-x)P graded buffers

基于低溫In_xGa_(1-x)P組分漸變緩沖層的InP/GaAs異質(zhì)外延

It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality.

結(jié)果表明外延層具有平坦的異質(zhì)結(jié)界面和良好的晶體特性。

Fabrication and Properties of Epitaxial Stannate Thin-films and Heterojunctions with the Perovskite Structure

鈣鈦礦錫酸鹽外延薄膜及相關(guān)異質(zhì)結(jié)制備與物性研究